연구 진행 상황 보고서 Insulin Pump CPF & BEPatch DBS & 안면자극 약물 주입 펌프 2주전 계획 연구 Sleep mode 전류 문제 해결 6월 말까지 임상시험 N = 60 데이터 정리 알고리즘 개발 시작 실험 진행 - 약물 주입량 재현성 검증 연구 결과 Sleep mode 전류 문제 해결 완료 데이터 정리 완료 (N=32/38) 초기 알고리즘 : 치열이형 자료 참조 디바이스 실험 논문 Figure 구성 완료 전자석 업체 방문 (최적화) 문제점 및 대책 목표 및 계획 개발 완료 및 전달 의료기기 허가 반기보고 준비 논문 투고 전자석 수정 제작

연구 진행 상황 보고서 AEP X-Project 2주전 계획 연구 결과 문제점 및 대책 목표 및 계획 임피던스 측정 F/W Test Test version H/W test 완료 연구 결과 Test version H/W - Oz, 귓속 신호 비교  완료 - 저전력 / 소형화 AFE test  진행 중 문제점 및 대책 목표 및 계획 저전력 / 소형화 AFE test 완료 Oz, 귓속 신호 비교 (SSVEP, AEP, Alpha)

약물 주입 펌프

Insulin pump H/W block diagram Lithium polymer 1 cell (3.7V) Buck-Boost Regulator (LTC3531) Reference IC 2.5V (REF5025) Piezo buzzer ADC Reference Coin cell (for RTC / VBAT) Main MCU (STM32F103x) ADC MUX(Touch) (74HC4066) 2.4’ Touch LCD (KD024FM-1) Motor MCU (ATmega168) Photo Interrupt #2 (SG-211V) EXTI Comparator (LMV7275) RTC Crystal 32.768kHz (ABS) LED Driver (LDS8845) Crystal 7.3728MHz (ABMM) Control & Data pin Photo Interrupt #1 (SG-211V) MCU Reset IC (MIC811) UART UART SD_IO PWM Bluetooth 4.0 (BOT-CLE110) Micro SD (1040310811) Motor Driver (DRV8837) DC Motor

Insulin pump IC power dissipation PARTS DESCRIPTION CURRENT @sleep LTC 3531 Regulator Quiescent current : 16uA STM32F103VET6 Main MCU Stop mode : 25uA MIC811 MCU Reset circuit Supply current : 5uA VBAT Battery Monitoring (V divide) 3.3V / 200k = 16.5uA LDS8845 Touch LED driver Shutdown : 0.1uA REF5025 Touch ADC reference voltage Quiescent current : 0.8mA LMV7275 Comparator (EXTI, Sleep mode off) Supply current : 9uA 74HC4066 MUX (Touch X, Y) Supply current : 40uA + Touch power ON (5mA?) ATmega168 Motor MCU Power down : 1uA DRV8837 Motor driver Sleep mode : 30nA SG-211V Photo interrupters X

H/W block diagram (sleep mode test) 문제점 : Test 1 - MCU + LCD + SDcard (Touch 기능 제거) 이론 값 : 16uA + 800uA + 25uA + 5uA + 200uA + 0.1uA + 9uA + (40uA+Touch power) = 260uA 측정 값 : 2mA STM32F103x datasheet To further reduce power consumption in Sleep mode the peripheral clocks can be disabled prior to executing the WFI or WFE instructions The ADC or DAC can also consume power during the Stop mode Code 수정 결과 측정 값 : 400uA SD card 제거 : 180~210uA

X project Test version H/W 저전력 / 소형화 AFE Bluetooth 2.0 AEP device

Test version H/W summary AEP Device (+Lithium polymer, Bluetooth2.0, 저전력/소형화 AFE 3Ch.) Lithium polymer battery 11.1V(3cell) / mAh Bluetooth2.0 FB155BC (Firmtech 社.) 저전력 소형화 AFE Instrument Amp : INA826 OP-Amp : TSZ121  선정 근거 : 2nd meeting 발표자료 참고 Ch. 1 : Buffer – HPF – INA – HPF – LPF – Amp Ch. 2 : RC HPF – INA – HPF – LPF – Amp Ch. 3 : RC HPF – INA – HPG – Amp

Test version H/W verification 실험 환경 및 Setting Test device : #1, #2 실험 장소 : 국제관 2층 청각교육센터 내 Shield room LLR (100Avr, 1~100Hz, 12,000V/V), ABR(500Avr, 300~3,000Hz, 120,000V/V) [TEST #1] AEP Device 기능 성능 검증  (Oz, 귓속 신호 Quality 비교) 소리 검증 : 600Hz, 1kHz, 8kHz / 10, 30, 50dB HL Test signal : Electrode short noise level, LLR, ABR, EEG, SSVEP [TEST #2] 저전력 / 소형화 AFE Test Xproject target signal : evoked potential Test signal : LLR, SSVEP

[Test #1] Test version H/W 검증 결과 summary Board #1 Board #2 Sound Left O Right Electrode Short LLR setting (100 Avr.) 0.3720(μVp-p) 0.0818(μVrms) 0.3018(μVp-p) 0.0629(μVrms) ABR setting (500 Avr.) 0.1362(μVp-p) 0.0267(μVrms) 0.1330(μVp-p) 0.0261(μVrms) LLR 측정 ABR 측정 EEG 측정 (alpha wave test) Ch. 1 Ch. 2 Ch. 3

[Test #2] Test version H/W 저전력 / 소형화 AFE IC summary Instrument Amp OP-Amp Parts Offset voltage CMRR Input impedance Noise @1-10Hz (uVp-p) Supply current Size Notes INA118 50uV 110dB 10GΩ 0.28 0.7mA INA826 150uV 130dB 20GΩ 0.2 0.2mA Low B.W Parts Offset voltage CMRR Input impedance Noise @1-10Hz (uVp-p) Supply current Size Notes OPA2211 20uV 120dB 20kΩ 0.08 3.6mA Filter & Amp OPA192 5uV 140dB 100MΩ 1.3 1mA Buffer TSZ121 122dB ? 0.2 0.04mA

[Test #2] Test version H/W 저전력 / 소형화 AFE Test AFE #1 AFE #2 Buffer의 Input impedance 영향 INA 증폭 시 Saturation 여부 Buffer HPF Active INA Reference Amp LPF ADC INA Amp HPF LPF ADC Active Reference

[Test #2] Test version H/W AFE #3 AFE #4 AFE #5 INA Amp HPF ADC Active Reference LPF 제거  Aliasing effect에 의한 신호 왜곡 여부 INA Amp ADS1299 50 10 24 200 1 INA HPF ADC Active Reference Amp 제거 / 증폭률 감소  신호 측정 여부 INA ADC Active Reference HPF 제거  신호 Saturation 여부

[Test #1] Test version H/W Electrode short (AEP Board : 0.3720μVp-p, 0.0818μVrms) LLR setting AFE #1 AFE #2 Noise level (μV p-p / μVrms) 100Avr. Test 1 0.5342 0.088 0.2451 0.0441 Test 2 0.4549 0.0805 0.1674 0.0297 Test 3 0.5433 0.0889 0.1811 0.0358 Test 4 0.4764 0.0840 0.2179 0.0372 Test 5 0.4196 0.0849 0.1353 0.0334 Test 6 0.4612 0.0834 0.2358 0.0352 Averaging 0.4816 0.1971 0.0359 AFE #3 AFE #4 0.2050 0.0379 0.2295 0.0365 0.2303 0.0377 0.2267 0.0413 0.2583 0.0402 0.1998 0.0337 0.2461 0.0424 0.1867 0.0344 0.2318 0.0346 0.2608 0.0415 0.1986 0.2648 0.2283 0.2280 0.0370 AFE #5 0.2353 0.0437 0.2200 0.0394 0.2184 0.0385 0.1860 0.0323 0.1891 0.0353 0.2391 0.0359 0.2146 0.0375

[Test #1] Test version H/W Electrode short 결과 분석 AEP Board setting (Chip만 변경) AEP : 0.372μVp-p / 0.0818μVrms  저전력 : 0.4816μVp-p / 0.0849μVrms (증가) INA 전 Buffer / HPF 영향 0.4816μVp-p / 0.0849μVrms  0.1971μVp-p / 0.0359μVrms (큰 폭 감소, AEP 보드보다 성능↑) LPF 제거  Aliasing effect 고주파 성분 증가 (첨부 자료의 파형 참조) Amp 제거 / 증폭률 감소  신호 측정 여부 0.2283μVp-p / 0.0377μVrms  0.228μVp-p / 0.037μVrms (차이 없음) HPF 제거  신호 Saturation 여부 Noise level 차이 없음 Offset : 3.5μV  60μV로 증가, 신호 측정을 통해 확인

[Test #2] Test version H/W 검증 결과 summary Electrode short (LLR / 100Avr.) (μV p-p / μVrms) LLR SSVEP AEP 0.3720 0.0818 AFE #1 0.4816 0.0849 AFE #2 0.1971 0.0359 AFE #3 0.2283 0.0377 AFE #4 0.2280 0.0370 AFE #5 0.2146 0.0375

[Test #1] Test version H/W Electrode short LLR setting Board #1 Board #2 Noise level (μV p-p / μVrms) Test 1 0.3015 0.0670 0.3406 0.0698 Test 2 0.2990 0.0744 0.2839 0.0611 Test 3 0.3625 0.0730 0.3252 0.0645 Test 4 0.3945 0.0818 0.3162 0.0576 Test 5 0.3733 0.0707 0.2282 0.0473 Test 6 0.5016 0.1244 0.3170 0.0771 Averaging 0.3720 0.3018 0.0629 ABR setting Board #1 Board #2 Noise level (μV p-p/ μVrms) Test 1 0.1394 0.0258 0.1452 0.0246 Test 2 0.1184 0.0236 0.1138 0.0248 Test 3 0.1297 0.0295 0.1310 0.0267 Test 4 0.1266 0.1408 0.0291 Test 5 0.1637 0.0274 0.1416 0.0259 Test 6 0.0279 0.1259 0.0255 Averaging 0.1362 0.1330 0.0261

[Test #1] Test version H/W LLR 측정 (피험자 : 손장재) #1 #2

[Test #1] Test version H/W ABR 측정 (피험자 : 권치헌) #1 #2

[Test #1] Test version H/W Board #1 EEG 측정 (피험자 : 손장재) Open Close Open Close Open

[Test #1] Test version H/W Board #2 EEG 측정 (피험자 : 손장재) Open Close Open Close Open

[첨부] Test #1 Electrode short (LLR)

[첨부] Test #2 Electrode short (LLR) AFE #1 AFE #2 AFE #3 AFE #4 AFE #5

[첨부] Test #1 Electrode short (ABR)