반도체 소자 특성 분석 Dae-Hyun Kim March-7, 2016.

Presentation on theme: "반도체 소자 특성 분석 Dae-Hyun Kim March-7, 2016."— Presentation transcript:

1 반도체 소자 특성 분석 Dae-Hyun Kim March-7, 2016

2 Introduction of myself (Dae-Hyun Kim)
1997년 ~ 2004년, 서울대 전기공학부 석/박사 (반도체) 2005년 ~ 2008년, MIT Electrical Engineering, Post-doc Associate 2008년 ~ 2012년, Teledyne Scientific Company (미국 국방회사) 2012년 ~ 2014년, SEMATECH (미국 반도체 Consortia) 2015년 3월 ~ 현재, IT 대학 전자공학부 부교수 (반도체전공) Office: 3호관 407호,

3 Why do we have to study this lecture?
Intel’s 14 nm technology: The most recent process

4 Course Overview Schottky diodes (3 lectures)
Schottky barriers Thermionic emission theory Schottky diodes and ohmic contacts MOS Capacitors (6 lectures) Flat-band condition and flat-band voltage Surface accumulation Surface depletion Threshold condition and threshold voltage Beyond threshold voltage and inversion MOS C-V characteristics

5 Course Overview 3. MOSFETs (10 lectures)
Introduction to the MOSFET Complementary-MOS (CMOS) technology Surface mobilities in the MOSFET Qinv in the MOSFET Basic I-V model of the MOSFET Technology scaling Short-channel Effects (SCEs) 4. Design Project – Presentation by students

6 Course Grading: TBD 1st Exam: 40% (To be announced…, OPEN-BOOK)
Design Project: 40% (To be announced…) Homework: 20%

7 Goals of Today’s Lecture
Semiconductor Electrostatics in Thermal Equilibrium (TE)