반도체 소자 특성 분석 Dae-Hyun Kim March-7, 2016
Introduction of myself (Dae-Hyun Kim) 1997년 ~ 2004년, 서울대 전기공학부 석/박사 (반도체) 2005년 ~ 2008년, MIT Electrical Engineering, Post-doc Associate 2008년 ~ 2012년, Teledyne Scientific Company (미국 국방회사) 2012년 ~ 2014년, SEMATECH (미국 반도체 Consortia) 2015년 3월 ~ 현재, IT 대학 전자공학부 부교수 (반도체전공) Office: 3호관 407호, Email: dae-hyun.kim@ee.knu.ac.kr
Why do we have to study this lecture? Intel’s 14 nm technology: The most recent process
Course Overview Schottky diodes (3 lectures) Schottky barriers Thermionic emission theory Schottky diodes and ohmic contacts MOS Capacitors (6 lectures) Flat-band condition and flat-band voltage Surface accumulation Surface depletion Threshold condition and threshold voltage Beyond threshold voltage and inversion MOS C-V characteristics
Course Overview 3. MOSFETs (10 lectures) Introduction to the MOSFET Complementary-MOS (CMOS) technology Surface mobilities in the MOSFET Qinv in the MOSFET Basic I-V model of the MOSFET Technology scaling Short-channel Effects (SCEs) 4. Design Project – Presentation by students
Course Grading: TBD 1st Exam: 40% (To be announced…, OPEN-BOOK) Design Project: 40% (To be announced…) Homework: 20%
Goals of Today’s Lecture Semiconductor Electrostatics in Thermal Equilibrium (TE)